| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df8c00c581844c0261e384dd8f8dad5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_983902b338ca5bb81f8ece1087a7a49f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de63d2cb67daf79f418e07b8f04d4f57 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate |
2006-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4f92de463e642240700b18265efe83f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dac034764b77dd6d40c35dee04cc7958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e534ec2391de756242cf7d95d433c5d3 |
| publicationDate |
2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007029842-A1 |
| titleOfInvention |
Gallium nitride-based compound semiconductor light-emitting device and production method thereof |
| abstract |
The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008130823-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8101961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2315272-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484499-B2 |
| priorityDate |
2005-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |