| abstract |
A semiconductor light emitting device suitable for mounting with AuSn solder is provided. When the diffusion electrode is formed into a thin film with ITO or the like, irregularities are generated on the surface, and when the opening for the barrier layer is etched into the passivation film formed thereon, the unevenness between the diffusion electrode and the passivation film is caused by the irregularities. There is a risk that lateral etching proceeds at the interface. A multilayer electrode comprising a diffusion electrode formed on a semiconductor layer, a passivation film covering the surface of the diffusion electrode, the passivation film having an opening in a part thereof, and a titanium layer and a nickel layer alternately stacked In a semiconductor light emitting device having a structure and having a barrier layer formed on the surface of the passivation film and an AuSn solder layer formed on the barrier layer, the diffusion electrode surface has an opening to the passivation film. A buffer electrode having a diameter larger than that of the opening and a flat surface is formed at the facing position, and a barrier layer is connected to the buffer electrode. [Selection] Figure 3 |