| abstract |
PROBLEM TO BE SOLVED: To improve light extraction efficiency in a compound semiconductor light emitting device. SOLUTION: A hole injection ohmic electrode layer 4 is provided as a transparent conductive ohmic electrode layer in contact with a tunneling contact layer (CTL layer) 38 of a nitride semiconductor layer 3 of a light emitting diode 10, and further, an ohmic electrode layer 4 for hole injection is provided. The transparent thin film layer 5 is provided in contact with the substrate. By using ITO as the ohmic electrode layer 4 for hole injection, an electrode having a high light transmittance can be formed, whereby the light extraction efficiency can be improved. The light extraction efficiency can be further improved by setting the optical film thickness of the ohmic electrode layer 4 for hole injection to an integral multiple of 1/4 of the emission wavelength. Moreover, the reflectance can be made extremely small by providing the transparent thin film layer 5 and adjusting the refractive index and the film thickness. [Selection] Figure 1 |