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filingDate 2000-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cc568c6f7afebbbf37b135e1683423a
publicationDate 2002-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002026385-A
titleOfInvention Light emitting diode
abstract (57) [Problem] To provide a light emitting diode having a high light emission output which is easy to manufacture, has good luminous efficiency and good light extraction efficiency of visible light, is not limited in the area of a p-type side electrode, and has high luminance. provide. SOLUTION: InG which emits light in a blue to green region grown on a SiC substrate 11 with a buffer layer 12 interposed therebetween is provided. a light emitting layer 14 made of a nitride compound semiconductor containing aN, At least one or more DBR layers 16 (distributed Bragg reflection film) reflecting light made of a conductive material formed on the light emitting layer 14 and the first electrode 1 formed on the DBR layer 16 side 8 and the second transparent to light formed on the SiC substrate 11 side. An electrode 19 is provided, and light emitted from the light emitting layer 14 is DB Provided is a light emitting diode characterized in that light is reflected by the R layer 16, passes through the light emitting layer 14, is extracted from the side of the SiC substrate 11 having the second electrode 19 transparent to light, and emits light. .
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007214515-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014192419-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008130821-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018113477-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008130821-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013107128-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484499-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8101961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101145541-B1
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