| abstract |
An optoelectronic component is specified, comprising: an n-doped semiconductor body (1), a p-doped, structured semiconductor body (2), which is applied to the n-doped semiconductor body, between which a light-emitting pn junction (3) is provided, wherein - A mirror layer (4) on the side facing away from the n-doped semiconductor body side of the p-doped semiconductor body is applied, wherein - A contact body (5) is provided which is electrically contacted with a first region (5a) with the p-doped semiconductor body (2) and is electrically insulated from the n-doped semiconductor body, wherein - The contact body (5) on the same side of the device with a second region (5b), which is electrically isolated from the first region, electrically contacted with the n-doped semiconductor body and electrically insulated from the p-doped semiconductor body. |