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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
filingDate 2005-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f6291c092b6d5d98619db9f9b78b9e5
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publicationDate 2007-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I286394-B
titleOfInvention High efficiency group III nitride-silicon carbide light emitting diode
abstract A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484499-B2
priorityDate 2004-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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