| abstract |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light emitting element having an electrode made of a conductive oxide with high light transmittance. The present invention relates to first and second conductivity type nitride semiconductors 3 and 6 and a translucent electrode electrically connected to at least one of the first and second conductivity type nitride semiconductors. (10, 11, 12) and a first electrode 13 and a second electrode 14 electrically connected to the translucent electrode or at least one of the first and second conductivity type nitride semiconductors. In the light-emitting element, the light-transmitting electrode includes a transparent conductive film in which the concentration of contained oxygen is changed in the film thickness direction. Furthermore, the translucent electrode is composed of a first layer 11 made of a transparent conductive film and a second layer 12 made of a transparent conductive film having a lower oxygen concentration than the first layer in order from the nitride semiconductor. . [Selection] Figure 1 |