| abstract |
(57) [Problem] To provide a semiconductor light emitting device having high luminance and having no problem of peeling of a transparent conductive layer by dicing or the like. SOLUTION: A light emitting portion layer 12 composed of an active layer 3 sandwiched between a first conductive type clad layer 2 and a second conductive type clad layer 4 is provided on a first conductive type substrate 1 and a metal oxide. The transparent conductive layers 6, 7, or 8 and the electrodes 9, 10 are formed, and the transparent conductive layer has a multilayer structure of two or more layers (in the case of the transparent conductive layers 6, 7) or the composition changes gradually. A semiconductor light emitting device having a gradient composition structure (in the case of the transparent conductive layer 8). A current spreading layer 5 of the second conductivity type between the light emitting section layer 12 and the transparent conductive layer. And / or a compound semiconductor layer 11 is preferably formed. |