| abstract |
PROBLEM TO BE SOLVED: To provide a gallium nitride based light emitting diode having a vertical electrode structure. SOLUTION: An oxide window layer enhances external luminous efficiency due to Fresnel reflection loss and total reflection of a gallium nitride based light emitting diode of a vertical electrode, and has a metal reflection layer, so that reflection is non-selective with respect to the incident angle Therefore, the reflection angle frequency width is increased to reflect the light emitted from the light emitting layer, and this structure can increase the heat radiation effect and increase the antistatic ability, increase the working life of the device and increase the high current drive. Suitable for the application, the vertical electrode device also reduces the unit area of the die fabrication, and is advantageous for the traditional wire bonding package post-processing. [Selection] Fig. 10 |