http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1852
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| level | 10^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L31/1852 |
| modified | 2013-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBVcompounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBVcompound |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184 |
Incoming Links
Total number of triples: 1305.