| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3aec640ecbb1d6a48e49d3b6b1044534 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035227 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B1-00 |
| filingDate |
2010-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1149c636c924bc3e88e42d577b64bda1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64b0c1165e0ebfa6d20d48a993c3b9b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bb3c1b8288b27ee31c9850753a24879 |
| publicationDate |
2012-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120099441-A |
| titleOfInvention |
Nanowire Tunnel Diode and Manufacturing Method Thereof |
| abstract |
The present invention provides a tunnel diode and a method of manufacturing the same. The tunnel diode at least partially comprises a p-doped semiconductor region 4 and an n-doped semiconductor region 5 forming a pn-junction 6 in the nanowire 1. Preferably, nanowire 1 is made of one or more compound semiconductor materials forming a homojunction or heterojunction tunnel diode. Heterojunction tunnel diodes may be configured as Type-I (straddling gap), Type-II (staggered gap) or Type-III (broken gap). |
| priorityDate |
2009-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |