| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 |
| filingDate |
2011-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77d50d5f23414f396d77c5d63afc605e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a64ee2f8f44e8a0c5f5d76293741f93c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04984f45d814363d277576380011cb61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_717ee75d920d2a0abbce6e0685004c9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_116fe4c64e3eb3a653c32d6f05b9e9ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b13d0de7b966d8b85111f3f2a8f0037 |
| publicationDate |
2013-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130100883-A |
| titleOfInvention |
Light receiving element, optical sensor device, and manufacturing method of light receiving element |
| abstract |
In the type 2 MQW, there is provided a light receiving element or the like which can prevent the sensitivity of the short wavelength side from decreasing while improving the overall sensitivity. It is formed on the substrate 1 of the group III-V compound semiconductor, has a pixel P, and has a light-receiving layer 3 of MQW of type 2 positioned on the substrate 1, wherein the MQW has two different IIIs. 50-pair pairs or more of -V group compound semiconductor layers 3a and 3b are paired, and of the layer 3a of the one with higher potential of a valence band among two different III-V compound semiconductor layers which form a pair It is characterized by making the film thickness thinner than the film thickness of the other layer 3b. |
| priorityDate |
2010-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |