| abstract |
A method for producing an electronic semiconductor chip (100) is proposed, the method having the following steps: - providing a growth substrate (1) with a growth surface (10), which is formed by a surface structure having a large number of three-dimensional shapes The flat surface (11) of (12) is formed on the flat surface (11), the nucleation layer (2) consisting of oxygen-containing AlN is applied directly on the growth surface (10) over a large area, and the A nitride-based semiconductor layer sequence ( 3 ) is grown on the nucleation layer ( 2 ), wherein the semiconductor layer sequence ( 3 ) is grown selectively from the flat surface ( 11 ). Furthermore, an electronic semiconductor chip is proposed. |