| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4ecd961189d4b5778488c6aa30c79ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03044 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2021-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a5e51105f445a5d13bffdd8247dffb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97353c6a7ff40bc3e500562dbb7d127b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af2b18b49e8303ff703c934a01ea0875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23c7e86045ac8e20498480c1f3999b26 |
| publicationDate |
2022-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11430907-B2 |
| titleOfInvention |
Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
| abstract |
In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer. |
| priorityDate |
2014-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |