| abstract |
Epitaxial substrate (11, 12, 13) for a nitride compound semiconductor material with a nucleation layer (2) directly on a substrate (1), the nucleation layer (2) having at least one first layer (21) made of AlON with a pillar structure, on which Nucleation layer (2) a SiN layer (4) is applied, and wherein the column structure has an oxygen content which decreases with increasing distance from the substrate (1). |