| abstract |
A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less than 2.8 eV and not more than 3.4 eV or a boron phosphide (BP)-base mixed crystal which contains the boron phosphide (BP) and which is represented by the formula: B α Al β Ga γ In 1-α-β-γ P δ As ∈ N 1-δ-∈ (0<α≦1, 0≦β<1, 0≦γ<1, 0<α+β+γ≦1, 0<δ≦1, 0≦∈<1, 0<δ+∈≦1). |