http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102668106-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02366 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0693 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-054 |
| filingDate | 2010-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102668106-B |
| titleOfInvention | There is the metal backing reverberation of ad hoc structure |
| abstract | In general embodiment of the present invention relate to the device manufacture of the film as solar energy equipment or other electronic installation, and comprise for the back reflection thing with ad hoc structure in Application of Solar Energy.In one embodiment, a kind of method of metal backing reverberation for the formation of having ad hoc structure, described method comprises: be deposited on by metal level on the GaAs material in stacks of thin films; Form the array of metal island from described metal level during annealing process; From described GaAs material remove or etching material to form hole between described metal island; And plated metal reflector layer is to fill described hole and to cover described metal island.In another embodiment, a kind of metal backing reverberation with ad hoc structure comprises: the array of metal island, and it is arranged on GaAs material; Multiple hole, it to be arranged between described metal island and to extend into described GaAs material; Metallic reflection nitride layer, it is arranged on above described metal island; And multiple reverberation excrescence, it is formed and extends from described metallic reflection nitride layer and enter the described hole formed described GaAs material between described metal island. |
| priorityDate | 2009-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 86.