http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102013211231-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0687 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2013-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a5f69c3f59b08f18c724a24f7736558 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20cb38d9cb42b4a5b0c5a6558bd770e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aa38168c9d81bd491d99b5cad966a8c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bca646d3b34411235d24e8d804d6b5d |
| publicationDate | 2016-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102013211231-B4 |
| titleOfInvention | Method for forming a tandem photovoltaic unit |
| abstract | A method of forming a tandem photovoltaic device, the method comprising: Providing (102) solid germanium or a germanium layer formed on a silicon substrate; Wet etching the germanium layer using an acidic etchant containing phosphoric acid, hydrogen peroxide and ethanol in a ratio of 1: 1: 1; Forming pyramidal shapes (106; 108) in the germanium layer such that (111) crystal faces (104) are exposed to form a textured surface; Doping an upper surface (110) of the germanium layer to form a first pn junction on or above the textured surface; Depositing a first semiconductor layer (112) following the textured surface on the upper surface, the first semiconductor layer containing a GaAs layer or alloys thereof; Doping a portion of the first semiconductor layer to form a second pn junction (132); Depositing a second semiconductor layer (116) following the profile of the textured surface on the first semiconductor layer, the second semiconductor layer containing a GaP layer or alloys thereof; and Doping a portion of the second semiconductor layer to form a third pn junction (134). |
| priorityDate | 2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.