http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109599460-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e8edd6e45a8a00b08b646c6142ae7a9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0687 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0687 |
| filingDate | 2018-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_814bd6a18d09dedfe073213a2f392d13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92215aa52bee6594347baa3602911ca2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2441868a7ffede78b90df46b8ed4d174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa75e6124bd48d1740e91918f6d1466a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f938c3f9f02f76ceecc6202d8ddce92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf8259e92abd147ba64a139ffd4dc913 |
| publicationDate | 2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109599460-A |
| titleOfInvention | A kind of manufacturing method of compound back surface field space GaInP/GaInAs/Ge battery epitaxial wafer |
| abstract | The invention discloses a manufacturing method of a compound back surface field space GaInP/GaInAs/Ge battery epitaxial wafer, which optimizes the back surface field layer in the conventional space lattice matching GaInP/GaInAs/Ge battery, that is: the space lattice of the present invention The middle cell and top cell in the matching GaInP/InGaAs/Ge cell are respectively introduced with a composite back surface field structure, the middle cell is Al 0.3 Ga 0.7 As/Ga 0.5 In 0.5 P composite back surface field structure, and the top cell is Al 0.33 Ga 0.15 In 0.52 P /Al 0.1 Ga 0.4 In 0.5 P composite back surface field structure. Through the design of the composition and concentration of each layer of the compound back surface field, the conduction band step and concentration gradient are formed in the back surface field, so that the electric field between the back surface field and the base area is strengthened, so that the photogenerated carriers generated in the base region of the battery reach the back surface field. The reflection efficiency is improved, and the minority carriers are better collected, thereby improving the photoelectric conversion efficiency of the battery. |
| priorityDate | 2018-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.