Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7371 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0312 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02 |
filingDate |
2010-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76fb905fe86472478cd786b4a1242a55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4660ae2675629d76aa1a68dfa27d93b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25e28e4db4c61749fff03c29fc6ca7ad |
publicationDate |
2011-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201108410-A |
titleOfInvention |
Semiconductor substrate, electronic device, method for making a semiconductor substrate, and method for making an electronic device |
abstract |
This invention provides a semiconductor substrate having a base substrate having impurity regions in which impurity atoms are introduced into silicon, a plurality of seed members disposed adjoining to the impurity regions, and a plurality of chemical compound semiconductors respectively lattice-matched or quasi lattice matched with the plurality of seed members, the plurality of chemical compound semiconductors being disposed respectively adjoiningly to the plurality of the seed members. The semiconductor substrate is disposed on the base substrate and may have an inhibiting member having a plurality of openings for exposing at least a part of the imparity regions. |
priorityDate |
2009-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |