| abstract |
An underlayer film-forming material comprising a novolak resin having a fluorene or tetrahydrospirobiindene structure. [Effect] The underlayer film forming material of the present invention has an extinction coefficient sufficient to exhibit a sufficient antireflection effect at a film thickness of 200 nm or more by combining with an intermediate layer having an antireflection effect if necessary, and is suitable for substrate processing. The CF 4 / CHF 3 gas and Cl 2 / BCl 3 gas etching rates used are also stronger than ordinary m-cresol novolac resins and have high etching resistance. Also, the resist shape after patterning is good. [Selection figure] None |