http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2599818-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0751 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-56 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-14 |
filingDate | 2012-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4f04400920727cf56f01b5702ae1a91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90276c3fc7ed227be052968bb970bcd8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c35dc31e0f008513854fb397a72146b |
publicationDate | 2013-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-2599818-A1 |
titleOfInvention | Silicon-containing resist underlayer film-forming composition and patterning process |
abstract | The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process. n n R 1 m0 B(OH) m1 (OR)( 3-m0-m1) (1) n n R 10 m10 R 11 m11 R 12 m12 Si(OR 13 ) (4-m10-m11-m12) (2) |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110488407-A |
priorityDate | 2011-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 1066.