| abstract |
A processing mask that uses a tri-level resist but does not cause a pattern defect in the lowermost first resin film that is a component of the tri-level resist, and can sufficiently cope with further fine pattern formation. To achieve. A polyaryl-based resin film, which is an organic resin having a higher heat-resistant temperature than a film formation temperature of an inorganic film formed by a plasma CVD method, is a silicon film formed by a plasma CVD method, having a high film density and few defects. Fine processing is performed using a tri-level resist including the oxide film 12 and the photoresist film 13. [Selection diagram] Fig. 1 |