| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-14 |
| filingDate |
2012-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c35dc31e0f008513854fb397a72146b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4f04400920727cf56f01b5702ae1a91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f7b12d6486335e786045da041448a4 |
| publicationDate |
2013-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2599819-A1 |
| titleOfInvention |
Silicon-containing resist underlayer film-forming composition and patterning process |
| abstract |
The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development. nR 1 m0 B(OH) m1 (OR) (3-m0-m1) (1) nR 10 m10 R 11 m11 R 12 m12 Si(OR 13 ) (4-m10-m11-m12) (2) |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9312144-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2857467-A1 |
| priorityDate |
2011-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |