| abstract |
A method for stably forming a high-precision fine pattern used in a semiconductor manufacturing process such as an IC, a circuit board such as a liquid crystal or a thermal head, and other photofabrication processes. Provided are a resist composition used, a developer used in the method, and a rinse used in the method. (A) A step of applying a resist composition containing a resin having a specific repeating unit, having an increased polarity by the action of an acid, and a decrease in solubility in a negative developer, and (b) an exposure step. And (d) a pattern forming method including a step of developing using a negative developer, a resist composition used in the method, a developer used in the method, and a rinse solution used in the method. [Selection figure] None |