http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101745488-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2014-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101745488-B1 |
| titleOfInvention | Pattern formation method, electronic-device production method, and processing agent |
| abstract | (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin whose polarity is increased by the action of an acid and whose solubility in a developer containing an organic solvent is decreased, (2) (3) a step of developing the film by using a developing solution containing an organic solvent to form a pattern to be processed; and (4) a step of forming a pattern to be processed on the basis of 1 (X) which has at least any one of a primary amino group and a secondary amino group in the presence of a treating agent containing a compound Linking process is carried out), it is possible to obtain a pattern forming method capable of finely dividing a pattern, (For example, 60 nm or less) can be reliably formed, and the line and space pattern can be formed in a pattern forming method capable of forming the line and space pattern in a state where the roughness performance is excellent after the shrink process is applied, and A processing agent used therefor, and a method of manufacturing an electronic device using the pattern forming method. |
| priorityDate | 2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 268.