| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7657e330ad716001ec1e73957a43ddfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_370f099c39efce82f1516157a8722aed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e01544ac3dfae0b7c761b3a4fbc51ebd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate |
2012-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_366a30307d2ec1be8983ebece1d619c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb477775825ab186e9a028ec93575f5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c3ae689e612bd73009b0b8e4e3b1def |
| publicationDate |
2014-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8859189-B2 |
| titleOfInvention |
Patterning process |
| abstract |
The invention provides a patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition, a step of exposing to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35° or more to lower than 70° after exposure is used as the composition. There can be optimum patterning process as a patterning process of a negative resist pattern to be formed by adopting organic solvent-based development. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10031420-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9442377-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11485824-B2 |
| priorityDate |
2011-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |