| abstract |
An object of the present invention is to provide a pattern forming method that suppresses the occurrence of roughness and missing contact holes on the exposed surface after development, and is excellent in lithography properties such as resolution and circularity, and a radiation sensitive composition that is optimal for this pattern forming method. Is to provide things. The present invention is a pattern forming method comprising (1) a step of forming a resist film on a substrate using a radiation-sensitive composition, (2) an exposure step, and (3) a development step, wherein (3) The developer in the development step contains 80% by mass or more of an organic solvent, and the radiation-sensitive composition includes a polymer [A] having a structural unit having an acid-dissociable group, and [B] a radiation-sensitive acid generator. A pattern forming method, wherein any one of the components in the radiation-sensitive composition has a group represented by the following formula (1). |