| abstract |
A pattern having excellent line width variation (LWR), focus margin (DOF), and pattern shape in order to more stably form a high-precision fine pattern for manufacturing a highly integrated and high-precision electronic device. A forming method, and a resist composition and a resist film suitable for the forming method are provided. (A) a step of forming a film of a chemically amplified resist composition; (A) a pattern forming method characterized by comprising a step of exposing the film, and (c) a step of developing using a developer containing an organic solvent, wherein the resist composition comprises: (A) a resin whose solubility in a developer containing an organic solvent is reduced by the action of an acid; (B) A pattern forming method comprising a compound that generates an acid upon irradiation with actinic rays or radiation, and (C) a basic compound or an ammonium salt compound that is reduced in basicity upon irradiation with actinic rays or radiation. [Selection figure] None |