| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 |
| filingDate |
2011-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ba7b215ff6ec205b4a61d9c5a69209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24ef466fc3607e925bf3e57161456513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2550cc2b94d454541402e8bda09ac81d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92ab7ce0b03f328be97bc1f8044d6b24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ab9fd0e67049447b5c4db1f50f5e898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de362a6f4261fa964aa91f0cb9e9e0e0 |
| publicationDate |
2012-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120002468-A |
| titleOfInvention |
Developer used in the pattern formation method and the pattern formation method |
| abstract |
Providing the pattern formation method which can form the pattern in which the foreign material adhesion defect was reduced, and providing the developing solution used for this pattern formation method. A pattern forming method comprising the steps of (a) forming a film by a chemically amplified resist composition, (b) exposing the film, and (c) developing the exposed film using a developer containing an organic solvent. The content rate of the alcohol compound (X) in the said developing solution is 0 to 500 ppm with respect to the total mass of a developing solution, The pattern formation method characterized by the above-mentioned. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140020448-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190045270-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120101618-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180107751-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11733611-B2 |
| priorityDate |
2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |