| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0751 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-06 |
| filingDate |
2012-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c35dc31e0f008513854fb397a72146b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b91be0fb738fb2c71aa9dcc2a16bf99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f7b12d6486335e786045da041448a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4f04400920727cf56f01b5702ae1a91 |
| publicationDate |
2013-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2540780-A1 |
| titleOfInvention |
Composition for forming resist underlayer film and patterning process using the same |
| abstract |
The invention provides a composition for forming a silicon-containing resist underlayer film comprising: n(A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition. n n R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1) n n U(OR 4 ) m4 (OR 5 ) m5 (2) n n R 6 m6 R 7 m7 R 8 m8 Si(OR 9 ) (4-m6-m7-m8 ) (3) n n Si(OR 10 ) 4 (4) |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2832807-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9248693-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10000664-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2628744-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9377690-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8992790-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9075309-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9069247-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2657767-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951917-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2657240-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3381969-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2657766-A1 |
| priorityDate |
2011-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |