| abstract |
A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, where W<sub>1</sub> represents a tetravalent organic group, n1 represents an integer of 0 or 1, n2 represents an integer of 1 to 3, and R<sub>1</sub> represents an alkynyl group having 2 to 10 carbon atoms. This provides a compound for forming an organic film which is cured not only under air, but also under film formation conditions of inert gas, and can form an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and also provides a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material. |