patent/WO-2004066377-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004066377-A1

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filingDate	2004-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6b7defa20c7b1368b2f28ce3ae9dfb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cae93183f3a8e6d75bf48c810297d0ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9104f973a0f06378d8dd451118c0471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f906c86af135ba50b08ce164df89fed2
publicationDate	2004-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	WO-2004066377-A1
titleOfInvention	Method of cvd for forming silicon nitride film on substrate
abstract	A method of CVD for forming a silicon nitride film on substrate (W), comprising the step of accommodating substrate (W) in treating vessel (8) and heating the same to a treating temperature and the step of feeding a treating gas containing hexaethylaminodisilane gas and ammonia gas onto the substrate (W) heated to a treating temperature so as to deposit a silicon nitride film on the substrate (W).
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