| abstract |
(Problem) To provide a method for the production of silicon nitride and silicon oxynitride films by CVD technology, wherein said method provides acceptable film - deposition rates even at lower temperatures and is not accompanied by the production of large amounts of ammonium chloride. (Solution) Use of a hydrocarbylaminodisilane compound with the formula (R0)3-Si-Si-(R0)3 (I) {each R0 is independently selected from the hydrogen atom, chlorine atom, and -NR1(R2) groups (wherein R?1 and R2¿ are each independently selected from the hydrogen atom and C¿1? to C4 hydrocarbyl with the proviso that R?1 and R2¿ may not both be the hydrogen atom) and at least one R0 is the -NR1(R2) group} as a precursor for silicon nitride and silicon oxynitride. |