| abstract |
(57) [Summary] [Structure] Using a source gas containing an organic Si compound having a Si-N bond, a lower layer insulating film composed of a SiN-based thin film having a relatively high hydrocarbon group content is formed on a substrate by plasma CV. After the film formation by D, the mixed gas containing SiH 4 and N 2 or NH 3 is used while the substrate is kept in the state of being shielded from the atmosphere, or the organic Si having the Si—N bond is used. Using the compound and N 2 or NH 3 , an upper insulating film made of a SiN-based thin film having a relatively low hydrocarbon group content is formed on the lower insulating film by plasma CVD. [Effect] While ensuring excellent coverage, insulation resistance, An insulating film having excellent film quality such as water resistance and corrosion resistance can be formed. Therefore, it is possible to improve the performance and yield of semiconductor devices based on fine design rules. Moreover, it does not reduce the throughput and is economically efficient. |