| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b51cde40ffdaf0e9645249e00f89a86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f41c31a0f765d550c9c1fd42b15abd43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a00dc29d1b0327757d97ebf7f6b9f5f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-1055 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate |
2010-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41fa43c59671e42535b65d6cf4e9565c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2d35927b44fc0d1cc72d8bbc6fcc591
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a11aa54c02a8370de821104e2a090b6 |
| publicationDate |
2015-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9217921-B2 |
| titleOfInvention |
Resist underlayer film forming composition containing silicon having sulfide bond |
| abstract |
There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R 1 a Si(R 2 ) 3-a ] b R 3 wherein R 3 has a partial structure of Formula (2): R 4 —S—R 5 . |
| priorityDate |
2009-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |