| abstract |
PROBLEM TO BE SOLVED: To provide an etching method for realizing trench etching without burrs or surface roughness on a trench side wall surface while maintaining a high-speed etching rate. A total gas mixed with a mixed gas composed of SF6 and O2 or a mixed gas composed of SF6, O2 and SiF4 with respect to a silicon substrate or a silicon substrate including a silicon oxide dielectric layer. Plasma etching is performed to form a trench or a hole by forming a silicon trench with a mixed gas plasma to which a gas containing hydrogen is added in a range of 5% to 16% of the flow rate. [Selection] Figure 1 |