| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2009-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71e4eecee9a3b0a7f0e6dd3641759dfc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99f9508876d84ed36f3617f58f5fd680 |
| publicationDate |
2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110084408-A |
| titleOfInvention |
Silicon Etching with Passivation Using Plasma Enhanced Oxidation |
| abstract |
A method and apparatus are provided for etching a silicon layer through a patterned mask formed over the silicon layer. The silicon layer is disposed in the etching chamber. A fluorine containing gas and an etching gas including oxygen and hydrogen containing gas are provided into the etching chamber. A plasma is generated from the etch gas, and features are etched into the silicon layer using the plasma. Thereafter, the etching gas is stopped. The plasma may contain OH radicals. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210093718-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190058549-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150115947-A |
| priorityDate |
2008-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |