http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012507144-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 2009-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2012-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2012507144-A |
titleOfInvention | Silicon etching method and apparatus with passivation using plasma enhanced oxidation |
abstract | A method and apparatus are provided for etching a silicon layer through a patterned mask formed thereon. The silicon layer is placed in the etching chamber. An etching gas including a fluorine-containing gas and an oxygen / hydrogen-containing gas is provided into the etching chamber. A plasma is generated from the etching gas and features are etched into the silicon layer using the plasma. The etching gas is then stopped. The plasma may contain OH radicals. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018182142-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018193971-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016189409-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012507145-A |
priorityDate | 2008-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.