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publicationDate 2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20100105725-A
titleOfInvention Fabrication of a silicon structure and deep silicon etch with profile control
abstract A method of etching features into a silicon layer with a steady-state gas flow is provided. An etching gas is provided that includes an oxygen containing gas and a fluorine containing gas. The plasma is provided from the etching gas. Thereafter, the flow of etching gas is stopped.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210062172-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190019153-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160113370-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150035583-A
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