http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011115008-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
filingDate | 2011-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2011115008-A1 |
titleOfInvention | Etching method and etching apparatus |
abstract | The etching method for etching the substrate (S) placed on the stage electrode (3) in the vacuum chamber (1) in the thickness direction is to supply an etching gas into the vacuum chamber (1), 3) supplying high-frequency power at a frequency of 60 MHz to 150 MHz, and the energy distribution of ions incident on the substrate (S) is different from each other depending on the frequency of the high-frequency power. Pressure that has a pair of first peaks that are expressed at the ends of the side and a second peak that is expressed in an energy region lower than the pair of first peaks and has a higher intensity than the pair of first peaks. And performing the etching. |
priorityDate | 2010-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.