Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01111 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2017-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bb8561798ca6c9749388b74071b992a |
publicationDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20170142926-A |
titleOfInvention |
Method of manufacturing semiconductor device, and semiconductor manufacturing apparatus |
abstract |
The present invention relates to a process for forming a silicon film by supplying a film forming gas containing silicon to an object to be processed having a concave portion formed on its surface and filling the concave portion with silicon to prevent formation of voids and formation of voids in the silicon layer And to provide a technology that can do this. The film forming gas is supplied to the object to be processed (wafer W), and the silicon film 44 is formed in the concave portion 42 on the surface of the object to be processed. Subsequently, a process gas containing a halogen gas for etching the silicon film 44 and a roughness suppressing gas for suppressing the roughness of the surface of the silicon film 44 after etching by the halogen gas is supplied to the object to be processed And the silicon film 44 formed on the sidewall of the recess 42 is etched to expand the opening width of the recess 42. As a result, After that, a film forming gas is supplied to the object to be processed, and silicon is deposited on the silicon film remaining in the recess 42 to fill the silicon. |
priorityDate |
2016-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |