| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2016-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab6d1687e26e780aefa9c02d61cd3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf498f46f080cc8bab9e8ddde083950e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf767f757d0773a74077372acfdf7164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75ceab061ddfc71776011c0367e71a8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6433952805e1cde3a698f1bc1c444020
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0eb483b72e0b1262f6aef65bc7068be8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71e4eecee9a3b0a7f0e6dd3641759dfc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f69fe64e29328605460e0123632910aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e349b69e5133d3664022c18f1d9e385 |
| publicationDate |
2018-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9865472-B2 |
| titleOfInvention |
Fabrication of a silicon structure and deep silicon etch with profile control |
| abstract |
A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741406-B2 |
| priorityDate |
2007-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |