http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05267246-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1992-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1993-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05267246-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Abstract] [Purpose] With respect to the etching of silicon nitride film, the purpose is to improve the etching resistance of the resist and transfer it precisely and without damaging the underlying oxide film. [Configuration] by selective ion etching of the silicon nitride film 3 on the substrate 1, a method of transferring a resist pattern 4 on the nitride film 3, the atmospheric gas, SF 6, HB A mixed gas of r, He and O 2 or a mixed gas of at least one of N 2 , Freon gas, NF 3 and an inert gas is used, and etching is performed using a parallel plate type RIE apparatus. And after patterning the nitride film 3, ion etching is performed by using a parallel plate type RIE device, using a gas in which hydrogen gas is mixed in an etching gas or a mixed gas of SF 6 and hydrogen gas as an atmosphere gas, The altered layer 4a formed on the surface of the resist pattern 4 is removed, and the nitride film 3 is deposited on the oxide film 2. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4488999-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6787446-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007103876-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014131086-A |
| priorityDate | 1992-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.