http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7847
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| level | 14^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L29/7847 |
| modified | 2013-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate using a memorization technique, e.g. re-crystallization under strain, bonding on a substrate having a thermal expansion coefficient different from the one of the region |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 |
Incoming Links
Total number of triples: 732.