http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935107-B2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
filingDate 2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06e3015f12d743716420481f83d565bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af0b7561f3ab5032407bcd7ddd43253d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5443996ae8bd1eff1a8e426f0a034478
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c0caf172637daa6189786acacb13fbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc0025682c8adb27c90d36fb33f1e1a
publicationDate 2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9935107-B2
titleOfInvention CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same
abstract Techniques and methods related to dual strained cladding layers for semiconductor devices, and systems incorporating such semiconductor devices.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163905-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017373066-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158637-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692867-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886272-B2
priorityDate 2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007284613-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013092984-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012319211-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014264488-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010252862-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006157687-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010163926-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013270607-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7348284-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006033095-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453010884
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3468413
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419547014
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166703
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454092735
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453284447
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID8263
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452894838
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524988
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448362446
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419575161
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82899
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454232550
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453621816
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16217088
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID28117
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9999
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453357195
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452441329
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449693299
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426223773
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159419
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450964499
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID161922877
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414004986
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166601
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID161827978
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452908191
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159434
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159433
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16217677
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID150906
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID158731258
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556964

Total number of triples: 79.