Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06e3015f12d743716420481f83d565bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af0b7561f3ab5032407bcd7ddd43253d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5443996ae8bd1eff1a8e426f0a034478 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c0caf172637daa6189786acacb13fbb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc0025682c8adb27c90d36fb33f1e1a |
publicationDate |
2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9935107-B2 |
titleOfInvention |
CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same |
abstract |
Techniques and methods related to dual strained cladding layers for semiconductor devices, and systems incorporating such semiconductor devices. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163905-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017373066-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158637-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692867-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886272-B2 |
priorityDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |