| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ff95c7a65c262918b0d1fdab1f38899b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2e0dc06305136d411cb17c692f0cca00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ead8fa01f5fde14631683e45c7327fd7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f8f4d513c6c3be3e605db4aa71f264e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_83642b0dba9a7d4644d28649a9612767 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7847 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2012-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e29c54e66e4c6a82cfebd084f94186e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1be17ac0ef092dbbc8b9b2570b6c4a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebbb6e471f14a3aa8f8c6ad0731350d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be4d29f47ae95292ad47aa86bb05dbf6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f09707e7b18fe85aaaa3eba2c533e37a |
| publicationDate |
2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014073119-A1 |
| titleOfInvention |
Defect free strained silicon on insulator (ssoi) substrates |
| abstract |
A method of forming a strained semiconductor material that in one embodiment includes forming a cleave layer in a host semiconductor substrate, and contacting a strain inducing material layer on a surface of a transfer portion of the host semiconductor substrate. A handle substrate is then contacted to an exposed surface of the stress inducing material layer. The transfer portion of the host semiconductor substrate may then be separated from the host semiconductor substrate along the cleave layer. A dielectric layer is formed directly on the transfer portion of the host semiconductor substrate. The handle substrate and the stress inducing material are then removed, wherein the transferred portion of the host semiconductor substrate provides a strained semiconductor layer that is in direct contact with a dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651273-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553497-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594446-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10546789-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910257-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017317171-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015325468-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9768254-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495676-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10644167-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10438856-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937864-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014151806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8963248-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021327750-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804377-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104713931-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11081386-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019140106-A1 |
| priorityDate |
2012-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |