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grantDate 2015-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8963248-B2
titleOfInvention Semiconductor device having SSOI substrate with relaxed tensile stress
abstract A method comprises: forming a tensile SSOI layer on a buried oxide layer on a bulk substrate; forming a plurality of fins in the SSOI layer; removing a portion of the fins; annealing remaining portions of the fins to relax a tensile strain of the fins; and merging the remaining portions of the fins.
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