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Object |
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| classificationIPCAdditional |
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| filingDate |
2005-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
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| publicationDate |
2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005212061-A1 |
| titleOfInvention |
Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes |
| abstract |
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005245049-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7276428-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10418273-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009114902-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9716029-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7449394-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005196937-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005196936-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011303291-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8063413-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048289-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007111474-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7282449-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7285495-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006141748-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006014363-A1 |
| priorityDate |
2002-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |