| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2012-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a062fd9a836c8ab48009a0c986ac1ea5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_750edb886c2af38e8a8f5459b8ddf2ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08b44accff65abdedc44564a5d27a24a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aefcd41cc45cdaf5bc2d35be6de6a6cd |
| publicationDate |
2013-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130103279-A |
| titleOfInvention |
フ ｉｎＦＥＴ device with strained area |
| abstract |
A method of manufacturing a semiconductor device includes providing a substrate having fins disposed thereon. The gate structure is formed on the fin. The gate structure interfaces with at least two sides of the fin. The stress film is formed over the substrate, including over the fins. The substrate comprising the stress film is annealed. Annealing provides tensile strain in the channel region of the fin. For example, the compressive strain of the stress film can be transferred to create tensile stress in the channel region of the fin. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200021746-A |
| priorityDate |
2012-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |